| PART |
Description |
Maker |
| MPS2222RLRPG MPS2222AG MPS2222ARLG MPS2222ARLRAG M |
General Purpose Transistors
Small Signal General Purpose NPN; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Tape and Ammunition Box; Qty per Container: 2000 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
General Purpose Transistors
|
ON Semiconductor
|
| 2N4402 2N4403 ON0046 2N4403RLRE |
General Purpose Transistors PNP
General Purpose Transistors(PNP Silicon)
Motorola Preferred Device
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| U07-17 U07-24 U07-38 U07-19 PSC10-19 PSC10-D-11 PS |
1 ELEMENT, 175000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 600000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7200000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 240000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 120000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 430000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 50000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5000000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 72000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1500000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7200 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 36000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1200000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 6000000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1000000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 17500 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 360000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 86000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
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|
| BCW70LT1 ON0180 BCW70LT1/D BCW70L BCW70LT1-D |
General Purpose Transistors PNP Silicon
GENERAL PURPOSE TRANSISTORS(PNP SILICON)
From old datasheet system
Qoneral Purpose Tranlsltors
|
ON Semiconductor
|
| 2N3904RL1 2N3904 2N3903RLRM 2N3904ZL1 2N3903 2N390 |
General Purpose Transistors NPN Silicon
General Purpose Transistors(NPN Silicon)
; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
Storage
|
ONSEMI[ON Semiconductor]
|
| QPL2500-H QPL250-H QTL250-F QKL50-F QKL50-M QKL500 |
1 ELEMENT, 2500000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 250000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 50000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 500000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5000000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1000000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 100000 uH, GENERAL PURPOSE INDUCTOR
|
|
| EC30AL42464 EC30AL301.87 EC30AL301.82 EC30AL3518.2 |
1 ELEMENT, 464000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1870 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1820 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 18200 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 20000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 22600 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 26100 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 4020 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 4420 uH, GENERAL PURPOSE INDUCTOR
|
|
| R7S00212 R7S00412 R7S00612 R7S00812 R7S01012 R7S01 |
200V, 1200A general purpose single diode
400V, 1200A general purpose single diode
600V, 1200A general purpose single diode
800V, 1200A general purpose single diode
1000V, 1200A general purpose single diode
1200V, 1200A general purpose single diode
1400V, 1200A general purpose single diode
1600V, 1200A general purpose single diode
1800V, 1200A general purpose single diode
2000V, 1200A general purpose single diode
2200V, 1200A general purpose single diode
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Powerex Power Semiconductors
|
| BCP69 BCP69-10 BCP69-16 BCP69-25 |
PNP Silicon AF Transistor
General Purpose Transistors - SOT223; VCEO=20V; hFE=160..375
General Purpose Transistors - SOT223; VCEO=20V; hFE=85..160
General Purpose Transistors - SOT223; VCEO=20V; hFE=100..250
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Infineon Technologies A...
Infineon Technologies AG
|
| BCX54 BCX55 BCX55-16 BCX55-10 |
NPN Silicon AF Transistors(NPN硅放大器晶体
General Purpose Transistors - SOT89; VCEO=60 V; hFE=40...250
General Purpose Transistors - SOT89; VCEO=45V; hFE 40..250
|
SIEMENS AG
Infineon
|
| 2200LL-220H-RC 2200LL-331-H-RC 2200LL-391H-RC 2200 |
INDUCTOR TOROID 22UH 15% HORIZ 1 ELEMENT, 22 uH, GENERAL PURPOSE INDUCTOR
Inductor, Toroidal 1 ELEMENT, 330 uH, GENERAL PURPOSE INDUCTOR
INDUCTOR TOROID 390UH 15% HORIZ 1 ELEMENT, 390 uH, GENERAL PURPOSE INDUCTOR
INDUCTOR TOROID 12UH 15% HORIZ 1 ELEMENT, 12 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 8.2 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1.8 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1 uH, GENERAL PURPOSE INDUCTOR
INDUCTOR TOROID 33UH 15% HORIZ
Low Core Loss, High Current Toroid Inductors
1 ELEMENT, 4.7 uH, GENERAL PURPOSE INDUCTOR
|
Bourns, Inc.
BOURNS INC
Bourns Electronic Solutions
|
| MSC82306 2765 |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS 射频
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
From old datasheet system
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STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
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